|SOLID STATE DEVICES
|After the successful completion of course, students will be able to:
|Discuss the Fermi – Dirac distribution, equilibrium carrier concentration in n type and p type semiconductors, conductivity, mobility and temperature dependence of carrier concentration and mobility by understanding the basic concepts of semiconductors and equilibrium and steady state conditions.
|Analyze the High field effects and Hall effect, quazi Fermi levels and continuity equation using the theory of drift, diffusion and generation and recombination of excess carriers.
|Illustrate the various features of pn junction with energy band diagram and V – I characteristics using the ideal diode equation.
|Distinguish the various breakdown mechanisms in pn junction, ohmic and rectifying contacts.
|Deduce the terminal current equations using the basic concepts of BJT.
|Interpret the C V characteristics of MOS capacitor, MOSFET and recall the FinFET structure.