| SEMESTER: 3 |
| Course Title: |
SOLID STATE DEVICES |
| Course Code: |
C203 |
| Academic Year: |
2018-19 |
| CO No: |
Course Outcomes |
|
After the successful completion of course, students will be able to: |
| C203.1 |
Discuss the Fermi – Dirac distribution, equilibrium carrier concentration in n type and p type semiconductors, conductivity, mobility and temperature dependence of carrier concentration and mobility by understanding the basic concepts of semiconductors and equilibrium and steady state conditions. |
| C203.2 |
Analyze the High field effects and Hall effect, quazi Fermi levels and continuity equation using the theory of drift, diffusion and generation and recombination of excess carriers. |
| C203.3 |
Illustrate the various features of pn junction with energy band diagram and V – I characteristics using the ideal diode equation. |
| C203.4 |
Distinguish the various breakdown mechanisms in pn junction, ohmic and rectifying contacts. |
| C203.5 |
Deduce the terminal current equations using the basic concepts of BJT. |
| C203.6 |
Interpret the C V characteristics of MOS capacitor, MOSFET and recall the FinFET structure. |